| PART |
Description |
Maker |
| GS78116A |
8Mb Async SRAMs
|
GSI Technology
|
| CY7C149-25PC CY7C149-45PC |
Memory : Async SRAMs
|
Cypress
|
| CY7C1020B CY7C1020B-12VC CY7C1020B-12ZC CY7C1020B- |
32K x 16 Static RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44
Memory : Async SRAMs
|
CYPRESS SEMICONDUCTOR CORP
Cypress Semiconductor, Corp.
CYPRESS[Cypress Semiconductor]
http://
|
| N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR
AMI[AMI SEMICONDUCTOR]
|
| GS840Z18AT-180I GS840Z18AGT-180I GS840Z18AGT-150I |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8 ns, PQFP100
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| GS84032AT-100 GS84036AT-150 GS84036AT-150I GS84018 |
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
ETC
|
| GS840F18AGT-7.5I GS840F36AGT-7.5I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| CY7C1061AV33-12ZC CY7C1061AV33-12ZI CY7C1061AV CY7 |
Memory : Async SRAMs
JT 6C 6#22D PIN RECP
1M x 16 Static RAM 1M X 16 STANDARD SRAM, 8 ns, PBGA48
JT 37C 37#22D SKT PLUG 1M X 16 STANDARD SRAM, 8 ns, PDSO54
|
http://
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
| CY7C187 CY7C187-15PC CY7C187-15VC CY7C187-20PC CY7 |
64K x 1 Static RAM 64K X 1 STANDARD SRAM, 15 ns, PDIP22
64K x 1 Static RAM 64K的1静态RAM
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| GS70328TS-8IT GS7032 GS70328SJ GS70328SJ-10 GS7032 |
256K Async SRAMs
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
32K x 8 256Kb Asynchronous SRAM 32K的8 256Kb的异步SRAM
32K x 8 256Kb Asynchronous SRAM
|
GSI[GSI Technology]
Electronic Theatre Controls, Inc.
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
